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Constructing band diagrams of semiconductor heterojunctions
- Source :
- Applied Physics Letters. 66:457-459
- Publication Year :
- 1995
- Publisher :
- AIP Publishing, 1995.
-
Abstract
- A novel approach for constructing the band diagrams of semiconductor heterojunctions is discussed and illustrated. It is based on a simple measurement of band discontinuities, Debye length and the width of the space–charge region at the heterojunction interface. Monitoring the changes in the surface potential during heterojunction formation makes it possible to identify the contributions of the interface states and dipole. The approach is illustrated by the results of experiments performed on the InP/In2O3 heterojunction.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
business.industry
Heterojunction
Classification of discontinuities
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Space charge
Condensed Matter::Materials Science
symbols.namesake
Dipole
Semiconductor
symbols
business
Electronic band structure
Debye length
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 66
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........3ded214f575de8a80d885452cf1f5623
- Full Text :
- https://doi.org/10.1063/1.114055