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Constructing band diagrams of semiconductor heterojunctions

Authors :
Yoram Shapira
Leeor Kronik
E. Fefer
V. Korobov
M. Leibovitch
Source :
Applied Physics Letters. 66:457-459
Publication Year :
1995
Publisher :
AIP Publishing, 1995.

Abstract

A novel approach for constructing the band diagrams of semiconductor heterojunctions is discussed and illustrated. It is based on a simple measurement of band discontinuities, Debye length and the width of the space–charge region at the heterojunction interface. Monitoring the changes in the surface potential during heterojunction formation makes it possible to identify the contributions of the interface states and dipole. The approach is illustrated by the results of experiments performed on the InP/In2O3 heterojunction.

Details

ISSN :
10773118 and 00036951
Volume :
66
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........3ded214f575de8a80d885452cf1f5623
Full Text :
https://doi.org/10.1063/1.114055