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Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
- Source :
- Journal of Semiconductors. 35:124003
- Publication Year :
- 2014
- Publisher :
- IOP Publishing, 2014.
-
Abstract
- Using the measured capacitance—voltage and current—voltage characteristics of the rectangular AlN/GaN heterostructure field-effect transistors (HFETs) with the side-Ohmic contacts, it was found that the polarization Coulomb field scattering in the AlN/GaN HFETs was greatly weakened after the side-Ohmic contact processing, however, it still could not be ignored. It was also found that, with side-Ohmic contacts, the polarization Coulomb field scattering was much stronger in AlN/GaN HFETs than in AlGaN/AlN/GaN and In0.17Al0.83N/AlN/GaN HFETs, which was attributed to the extremely thinner barrier layer and the stronger polarization of the AlN/GaN heterostructure.
- Subjects :
- Materials science
Scattering
business.industry
Transistor
Heterojunction
Condensed Matter Physics
Polarization (waves)
Heterostructure field effect transistors
Electronic, Optical and Magnetic Materials
law.invention
Barrier layer
law
Materials Chemistry
Coulomb
Optoelectronics
Electrical and Electronic Engineering
business
Ohmic contact
Subjects
Details
- ISSN :
- 16744926
- Volume :
- 35
- Database :
- OpenAIRE
- Journal :
- Journal of Semiconductors
- Accession number :
- edsair.doi...........3e33ea8624fdfdc37ab5f97d3d4c1570