Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors

MLA

Ha Young Kang, et al. “Epitaxial κ-Ga2O3/GaN Heterostructure for High Electron-Mobility Transistors.” Materials Today Physics, vol. 31, Feb. 2023, p. 101002. EBSCOhost, https://doi.org/10.1016/j.mtphys.2023.101002.

APA

Ha Young Kang, Min Jae Yeom, Jeong Yong Yang, Yoonho Choi, Jaeyong Lee, Changkun Park, Geonwook Yoo, & Roy Byung Kyu Chung. (2023). Epitaxial κ-Ga2O3/GaN heterostructure for high electron-mobility transistors. Materials Today Physics, 31, 101002. https://doi.org/10.1016/j.mtphys.2023.101002

Chicago

Ha Young Kang, Min Jae Yeom, Jeong Yong Yang, Yoonho Choi, Jaeyong Lee, Changkun Park, Geonwook Yoo, and Roy Byung Kyu Chung. 2023. “Epitaxial κ-Ga2O3/GaN Heterostructure for High Electron-Mobility Transistors.” Materials Today Physics 31 (February): 101002. doi:10.1016/j.mtphys.2023.101002.