Circuit simulation of RTD and HPT monolithic optoelectronic integration

We first proposed monolithic optoelectronic integration of Resonant Tunneling Diode (RTD) and Heterojunction Bipolar Phototransistor (HPT). Circuit simulations using simple models of RTD and HPT successfully produced the optoelectronic bistable characteristics of RTD and HPT Negative Differential Resistance (NDR) device. The basic operation mechanism of Photoelectric Monostable-Bistable Transition Logic Elements (PMOBILE's) by utilizing the functionality of two series-connected RTDs in combination with HPT is also demonstrated by simulation.