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A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches

Authors :
Akiyo Nagata
Shi Yang Ji
Kazuhiro Mochizuki
Kazutoshi Kojima
Hajime Okumura
Yoshiyuki Yonezawa
Ryoji Kosugi
Yasuyuki Kawada
Yasuko Matsukawa
Adachi Kohei
Sadafumi Yoshida
Source :
Materials Science Forum. 963:131-135
Publication Year :
2019
Publisher :
Trans Tech Publications, Ltd., 2019.

Abstract

By inspecting the CVD growth parameters, such as the flow rates of HCl and H2 carrier gases, the pressure and the C/Si ratio, the trench filling in a high-rate mode with a high growth rate on the bottom and a relatively low growth rate on the mesa top was carried out. 4H-SiC trenches with the depths of 48 and 55 μm have been completely filled at the rates of 6.2 and 5.5 μm/h, respectively.

Details

ISSN :
16629752
Volume :
963
Database :
OpenAIRE
Journal :
Materials Science Forum
Accession number :
edsair.doi...........3f62f35ea48d7cc8d4556c323829e4a6
Full Text :
https://doi.org/10.4028/www.scientific.net/msf.963.131