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A novel deep etching technology for Si and quartz materials

Authors :
Koukou Suu
Tooru Koidesawa
Toshio Hayashi
Yasuhiro Morikawa
Source :
Thin Solid Films. 515:4918-4922
Publication Year :
2007
Publisher :
Elsevier BV, 2007.

Abstract

A disadvantage of ICP type plasma etching method compared with CCP one is low selectivity to photo resist. So a novel etching method was developed to obtain high selectivity to photo resist by incorporating a sputtering method, in which a target was placed on the opposite side of the substrate. Satisfactory results were obtained for a continuous gas feeding treatment and also for a gas modulating treatment.

Subjects

Subjects :
Microelectromechanical systems
Plasma etching
Materials science
business.industry
Metals and Alloys
Analytical chemistry
Surfaces and Interfaces
Isotropic etching
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Resist
Sputtering
Etching (microfabrication)
Materials Chemistry
Optoelectronics
Dry etching
Reactive-ion etching
business

Details

ISSN :
00406090
Volume :
515
Database :
OpenAIRE
Journal :
Thin Solid Films
Accession number :
edsair.doi...........3fc4fa56a9a255abde953ce3c73b272c

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