Artificial synaptic characteristics with strong analog memristive switching in a Pt/CeO2/Pt structure

MLA

Dae Hwan Kim, et al. “Artificial Synaptic Characteristics with Strong Analog Memristive Switching in a Pt/CeO2/Pt Structure.” Nanotechnology, vol. 28, June 2017, p. 285203. EBSCOhost, https://doi.org/10.1088/1361-6528/aa712c.

APA

Dae Hwan Kim, Hong Zheng, Jun Tae Jang, Jong-Sung Park, Hyung Jun Kim, Dong-Hun Kim, Chi Jung Kang, & Tae-Sik Yoon. (2017). Artificial synaptic characteristics with strong analog memristive switching in a Pt/CeO2/Pt structure. Nanotechnology, 28, 285203. https://doi.org/10.1088/1361-6528/aa712c

Chicago

Dae Hwan Kim, Hong Zheng, Jun Tae Jang, Jong-Sung Park, Hyung Jun Kim, Dong-Hun Kim, Chi Jung Kang, and Tae-Sik Yoon. 2017. “Artificial Synaptic Characteristics with Strong Analog Memristive Switching in a Pt/CeO2/Pt Structure.” Nanotechnology 28 (June): 285203. doi:10.1088/1361-6528/aa712c.