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Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing
- Source :
- Journal of Crystal Growth. 311:3273-3277
- Publication Year :
- 2009
- Publisher :
- Elsevier BV, 2009.
-
Abstract
- Oxygen precipitation in conventional and nitrogen co-doped heavily phosphorus (P)-doped Czochralski silicon (CZ-Si) crystal subjected to various high-temperature annealing in the range of 1000–1150 °C was comparatively investigated. It was revealed that oxygen precipitates hardly generated in conventional heavily P-doped CZ-Si; while they remarkably generated in the nitrogen co-doped one. Moreover, nitrogen doping could enhance oxygen precipitation during the prolonged annealing with a rapid thermal process (RTP) pre-treatment, but it has neglectable influence on oxygen precipitation for short-time annealing. It was believed that nitrogen co-doped heavily P-doped CZ-Si possesses nitrogen-related complexes that act as heterogeneous nuclei for super-saturated interstitial oxygen and then enhanced oxygen precipitation. Finally, it was found that nitrogen doping could hardly enhance oxygen precipitation in heavily P-doped CZ-Si at 1200 °C.
- Subjects :
- inorganic chemicals
Materials science
Silicon
Annealing (metallurgy)
Precipitation (chemistry)
Doping
Inorganic chemistry
technology, industry, and agriculture
chemistry.chemical_element
Crystal growth
social sciences
Condensed Matter Physics
Nitrogen
Oxygen
Inorganic Chemistry
Oxygen precipitation
chemistry
Materials Chemistry
lipids (amino acids, peptides, and proteins)
human activities
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 311
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........4030baf503af3e04289d0e805f01eac3
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2009.03.048