Properties of BiSrCaCuO films prepared by rf triode sputtering

Films of BiSrCaCuO have been deposited on MgO, ZrO 2 , Si, SiO 2 , and sapphire by rf triode sputtering from a single target made by hot-pressing an unreacted powder mixture of Bi 2 O 3 , SrCO 3 , CaO, and CuO. After a two-step post-growth anneal, films of Bi 4 Sr 3 Ca 3 Cu 4 O 16 on (100) MgO are highly oriented with the c-axis perpendicular to the substrate. These films attain zero resistance at 83K and have critical current densities of 2×10 5 A/cm 2 at 65K.