Microplasma breakdown delay spectroscopy of deep level traps in the GaP:N light-emitting diodes

It was studied microplasma breakdown statistical delay in the green GaP:N light emitting diodes. It was detected unusual strong dependence of deep level traps on the avalanche breakdown statistical delay after changing their charge state with the voltage decreasing on the p-n junction in the temperature range 300–380 K. It was found out four deep level traps and determined their parameters.