The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells light-emitting diode wafers

The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells (MQWs) light-emitting diode wafers was studied by means of electrochemical capacitance-voltage (ECV) and photoluminescence (PL). Compared with the sample unannealed, the hole carrier concentration of p-GaP layer increased from 5.5x10^1^8 to 6.5x10^1^8cm^-^3, and the hole carrier concentration of p-AlGaInP layer increased from 6.0x10^1^7 to 1.1x10^1^8cm^-^3, after wafer was annealed at 460^oC for 15min in nitrogen. The hole carrier concentrations of p-GaP layers and p-AlGaInP layers did not obviously change when the annealing temperature varied from 460 to 700^oC. However, after the sample was annealed under 780^oC for 15min, the hole carrier concentration of p-GaP layer and p-AlGaInP layer decreased to 8x10^1^7 and 1.7x10^1^7cm^-^3, respectively. At the same time, the diffusion of Mg atoms was observed.