Back to Search
Start Over
Stochastic simulation of photon propagation in Si for extreme-ultraviolet mask-defect inspection
- Source :
- Applied Physics Letters. 97:061108
- Publication Year :
- 2010
- Publisher :
- AIP Publishing, 2010.
-
Abstract
- Extreme-ultraviolet (EUV) light is used to inspect the Si photomask by analyzing the reflective photons. We demonstrated the re-emitting EUV photons from the flat Si surface and a two-dimensional semicircular Si defect by using the Monte Carlo method with a Gaussian phase function, respectively. The results of a model based on the Feynman path integral matches those of the Monte Carlo method very well by multiplying a correction function. The intensity of re-emitting photons from the defect can offer enough signals at the angle intersecting the surface less than 20°.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 97
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........410bff30fdb8c1572382f687cfd524ba