Gallenene epitaxially grown on Si(1 1 1)

Gallenene, an analogue of graphene composed of gallium, is epitaxially grown on Si(1 1 1) surface and studied by low temperature scanning tunneling microscopy (LT-STM). The STM images display that the buffer layer has a superstructure with respect to the substrate lattice and the gallenene layer has a hexagonal honeycomb structure. The scanning tunneling spectra (STS) of the gallenene show that it behaves as a metallic layer. First-principles calculations give the proposed configuration. Our results provide a method to synthesize the gallenene and shed important light on the growth mechanism of it.