Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation

MLA

Chung-Yu Lu, et al. “Stable AlGaN/GaN High Electron Mobility Transistors with Tungsten Nitride Gate Metallisation.” Electronics Letters, vol. 45, Jan. 2009, p. 1348. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........414192b888423f63a79eb8fa2dcba72b&authtype=sso&custid=ns315887.

APA

Chung-Yu Lu, Edward Yi Chang, Chia-Ao Chang, C. T. Lee, & Jui-Chien Huang. (2009). Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation. Electronics Letters, 45, 1348.

Chicago

Chung-Yu Lu, Edward Yi Chang, Chia-Ao Chang, C. T. Lee, and Jui-Chien Huang. 2009. “Stable AlGaN/GaN High Electron Mobility Transistors with Tungsten Nitride Gate Metallisation.” Electronics Letters 45 (January): 1348. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........414192b888423f63a79eb8fa2dcba72b&authtype=sso&custid=ns315887.