Cite
The C-V characteristics of TiO2/p-Si/Ag, GNR doped TiO2/p-Si/Ag and MWCNT doped TiO2/p-Si/Ag heterojunction devices
MLA
Adem Kocyigit, et al. “The C-V Characteristics of TiO2/p-Si/Ag, GNR Doped TiO2/p-Si/Ag and MWCNT Doped TiO2/p-Si/Ag Heterojunction Devices.” Chinese Journal of Physics, vol. 64, Apr. 2020, pp. 163–73. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........41a7b5b88359d36b81fdc1ead6019950&authtype=sso&custid=ns315887.
APA
Adem Kocyigit, Mehmet Okan Erdal, & Murat Yıldırım. (2020). The C-V characteristics of TiO2/p-Si/Ag, GNR doped TiO2/p-Si/Ag and MWCNT doped TiO2/p-Si/Ag heterojunction devices. Chinese Journal of Physics, 64, 163–173.
Chicago
Adem Kocyigit, Mehmet Okan Erdal, and Murat Yıldırım. 2020. “The C-V Characteristics of TiO2/p-Si/Ag, GNR Doped TiO2/p-Si/Ag and MWCNT Doped TiO2/p-Si/Ag Heterojunction Devices.” Chinese Journal of Physics 64 (April): 163–73. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........41a7b5b88359d36b81fdc1ead6019950&authtype=sso&custid=ns315887.