Formation of the Ni‐SiC(001) interface studied by high‐resolution ion backscattering

Ion backscattering in conjunction with channeling and blocking has been used to study the Ni‐SiC(001) system after Ni deposition at room temperature and after annealing up to a temperature of 870 K. Detailed analysis of the energy spectra of backscattered ions reveals morphology and composition on an atomic scale. The results show that up to the Ni coverage studied (14.1×1015 Ni atoms/cm2) no mixing occurs between Ni and Si or Ni and C at room temperature. At a temperature of 570 K, Ni starts to react with Si and forms a disordered film with a composition close to that of Ni2Si. Prolonged annealing at temperatures up to 870 K does not result in reaction to Si‐richer silicide phases. Upon annealing, C segregates to the surface of the Ni2Si film to form a layer of graphite.