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Nucleation of GaN on sapphire substrates at intermediate temperatures by Hydride Vapor Phase Epitaxy
- Source :
- Crystal Research and Technology. 47:121-130
- Publication Year :
- 2012
- Publisher :
- Wiley, 2012.
-
Abstract
- A novel approach to deposit GaN layers directly on a sapphire substrate by Hydride Vapor Phase Epitaxy is presented. The two-step deposition process includes the growth of GaN nucleation layers at intermediate temperatures in the range of 750 – 900 °C and subsequent high-temperature overgrowth at about 1040 °C. Closed and non-closed nucleation layers with a thickness of up to 2 μm were produced and characterized by scanning and transmission electron microscopy, micro-Raman spectroscopy and X-ray diffraction. A growth temperature of 780 °C is found to be optimal with respect to density and size distribution of nucleation islands. Raman measurements performed on the nucleation layers reveal nearly zero residual stress indicating effective stress relaxation on cooling down from growth temperature. The results of first overgrowth experiments demonstrate the possibility to grow 10 μm thick, crack-free GaN layers of high crystalline quality on the nucleation layers. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Subjects :
- Materials science
Hydride
Nucleation
Analytical chemistry
Gallium nitride
General Chemistry
Condensed Matter Physics
Epitaxy
chemistry.chemical_compound
Crystallography
symbols.namesake
chemistry
Transmission electron microscopy
Hydride vapour phase epitaxy
Sapphire
symbols
General Materials Science
Raman spectroscopy
Subjects
Details
- ISSN :
- 02321300
- Volume :
- 47
- Database :
- OpenAIRE
- Journal :
- Crystal Research and Technology
- Accession number :
- edsair.doi...........421e4e05e32432542958b9e018a64d47