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Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substrates

Authors :
N. Xiang
Hao Gong
Soo Jin Chua
Guangxia Hu
Hongfei Liu
Source :
Journal of Applied Physics. 102:063507
Publication Year :
2007
Publisher :
AIP Publishing, 2007.

Abstract

The effects of thermal annealing on Hall-effect measurement and photoluminescence (PL) from undoped n-type ZnO/GaAs thin-film samples have been studied. The evolutions of carrier concentration, electrical resistivity, and PL spectrum at various annealing conditions reveal that the dominant mechanism that affects the electrical and PL properties is dependent on the amount of thermal energy and the ambient pressure applied during the annealing process. At low annealing temperatures, annihilation of native defects is dominant in reducing the carrier concentration and weakening the low-energy tail of the main PL peak, while the GaAs substrate plays only a minor role in carrier compensations. For the higher temperatures, diffusion of Ga atoms from the GaAs substrate into ZnO film leads to a more n-type conduction of the sample. As a result, the PL exhibits a high-energy tail due to the high-level doping.

Details

ISSN :
10897550 and 00218979
Volume :
102
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........423804118ac8cca0070fe5e0f42d4940
Full Text :
https://doi.org/10.1063/1.2781248