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Epitaxial growth of nickel on Si(100) by dc magnetron sputtering
- Source :
- Journal of Applied Physics. 104:114302
- Publication Year :
- 2008
- Publisher :
- AIP Publishing, 2008.
-
Abstract
- The influence of the substrate temperature on the growth of highly textured Ni(111) and epitaxial Ni(200) with the relationships Ni[100]∥Si[110] and Ni(001)∥Si(001) on hydrogen terminated Si(100) wafer substrates by means of direct current magnetron sputtering is reported. In order to minimize crystal defect formation and to achieve a high quality epitaxial growth of Ni on Si, a two step deposition process was developed whereby different deposition conditions were used for an initial nickel seed layer and the remaining nickel film. The in-plane and out-of-plane structural properties of the films were investigated using x-ray scattering techniques, whereas magneto-optical Kerr effect and neutron reflectometry were used to confirm the magnetic nature of the epitaxially deposited nickel films.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 104
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........42a0b8343a70a5e5749155c691b5a14c
- Full Text :
- https://doi.org/10.1063/1.3032383