Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN

MLA

Yang Zhi-Jian, et al. “Effect of Annealing on Photoluminescence and Microstructures of InGaN/GaN Multi-Quantum Well with Mg-Doped p-Type GaN.” Chinese Physics, vol. 14, Mar. 2005, pp. 830–33. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........42adfa9da3499f2628b7a44ca9171cd9&authtype=sso&custid=ns315887.

APA

Yang Zhi-Jian, Feng Yu-Chun, Yu Tong-Jun, Niu Hanben, Li Zhong-Hui, Guo Bao-ping, & Zhang Guo-Yi. (2005). Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN. Chinese Physics, 14, 830–833.

Chicago

Yang Zhi-Jian, Feng Yu-Chun, Yu Tong-Jun, Niu Hanben, Li Zhong-Hui, Guo Bao-ping, and Zhang Guo-Yi. 2005. “Effect of Annealing on Photoluminescence and Microstructures of InGaN/GaN Multi-Quantum Well with Mg-Doped p-Type GaN.” Chinese Physics 14 (March): 830–33. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........42adfa9da3499f2628b7a44ca9171cd9&authtype=sso&custid=ns315887.