Vapor Phase Epitaxy of GaAs by Direct Reduction of GaCl3 with AsH3/H2

GaAs was epitaxially grown at 500–600°C by direct reduction GaCl3 with AsH3/H2. The GaCl3 in a stainless steel evaporator was maintained at about 85°C, and supplied by He carrier gas. The AsH3 diluted with H2 was supplied in a separate line directly to the deposition zone. The growth rate was about 5–10 µm/hr for GaCl3 of 5.5×10-5 mol/min and V/III ratio of 5. The carrier concentrations of the grown layers were 1015 to 1016 cm-3, and the maximum mobility obtained was 10000 cm2/V ·s at 77 K. These results indicate the possibility of a new growth method of III–V compounds.