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H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing
- Source :
- Applied Physics Letters. 110:133503
- Publication Year :
- 2017
- Publisher :
- AIP Publishing, 2017.
-
Abstract
- We report the fabrication of high mobility amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) irradiated by a single shot of a 248 nm KrF excimer laser. Very high mobilities (μ) of up to 43.5 cm2/V s were obtained after the low temperature excimer laser annealing (ELA) process. ELA induces high temperatures primarily in the upper layers and maintains very low temperatures of less than 50 °C in the substrate region. Scanning Transmission Electron micrographs show no laser induced damage and clear interfaces after the laser irradiation. In addition, several characterization studies were performed to determine the μ improvement mechanism. The analysis of Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy suggests incorporation of H mainly from the hybrid passivation layer into the channel. Moreover, Energy-dispersive X-ray Spectroscopy results show that Au diffused into the channel after ELA. Both KrF ELA-induced H and Au diffusion contributed to the higher μ. These results demonstrate...
- Subjects :
- 010302 applied physics
Electron mobility
Materials science
Physics and Astronomy (miscellaneous)
Excimer laser
Passivation
medicine.medical_treatment
Analytical chemistry
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
Laser
01 natural sciences
law.invention
Amorphous solid
Secondary ion mass spectrometry
X-ray photoelectron spectroscopy
law
0103 physical sciences
medicine
0210 nano-technology
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 110
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........433413cd72674511fe8a35c49cb3322d
- Full Text :
- https://doi.org/10.1063/1.4979319