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Molecular beam epitaxial AlGaN/GaN high electron mobility transistors leakage thermal activation on silicon and sapphire

Authors :
J. C. Moreno
Stephanie Rennesson
A. Fontserè
Yvon Cordier
Sébastien Chenot
Amador Pérez-Tomás
N. Baron
Marcel Placidi
Source :
Applied Physics Letters. 102:093503
Publication Year :
2013
Publisher :
AIP Publishing, 2013.

Abstract

GaN-based power switches are expected to play a key role in uncooled electronics at elevated temperatures. In this paper we explore the thermal activation mechanisms taking place in analogous AlGaN/GaN high electron mobility transistors grown on silicon and sapphire. The on-resistance (α = 1.4/1.8 [Si/sapphire]) and saturation current (α = −1.5/−1.8) temperature coefficients, the thermal activation energies (Ea = 0.02–0.30/0.30 eV), the drain current on/off ratio (α = −1.5–9.1/−9.4), or the thermal impedances (Rth = 76.9/125.8 K/W) were determined and comparatively analyzed by means of physical-based models which include polar-optical phonon scattering, Poole-Frenkel trap assisted and Schottky emission, and the channel self-heating.

Details

ISSN :
10773118 and 00036951
Volume :
102
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........43799d8fc59beb712d269228638ec159
Full Text :
https://doi.org/10.1063/1.4794411