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Capacitance–Voltage (C–V) characterization of 20 Å thick gate oxide: parameter extraction and modeling
- Source :
- Microelectronics Reliability. 40:571-575
- Publication Year :
- 2000
- Publisher :
- Elsevier BV, 2000.
-
Abstract
- This paper reports the Capacitance–Voltage (C–V) characterization of gate oxide in the 20 A thickness range, dealing especially with quantum and polysilicon effects. In the first part, the basis of Poisson–Schrodinger modeling is summarized. The extraction procedure of doping level, flat band voltage, threshold voltage, and oxide thickness is presented. A simple method to extract the polysilicon doping level and to correct for polysilicon effect on C(V) curves is proposed. These parameter extraction procedures are illustrated by experimental data obtained on both NMOS and PMOS transistors.
- Subjects :
- Materials science
business.industry
Polysilicon depletion effect
Doping
Transistor
Oxide
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Computer Science::Other
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
PMOS logic
Threshold voltage
law.invention
chemistry.chemical_compound
chemistry
Gate oxide
law
Electronic engineering
Optoelectronics
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
business
NMOS logic
Subjects
Details
- ISSN :
- 00262714
- Volume :
- 40
- Database :
- OpenAIRE
- Journal :
- Microelectronics Reliability
- Accession number :
- edsair.doi...........439ae50fca1f0fe0c00fc69af3f936eb