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The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN based Ultraviolet Light Emitting Diode Active Regions
- Source :
- Conference on Lasers and Electro-Optics/International Quantum Electronics Conference.
- Publication Year :
- 2009
- Publisher :
- OSA, 2009.
-
Abstract
- Time-resolved photoluminescence and transmission electron microscopy results suggest that the density of point defects may have a more significant role than threading dislocations in the performance of UVLED AlGaN active regions emitting at shorter wavelengths.
Details
- Database :
- OpenAIRE
- Journal :
- Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
- Accession number :
- edsair.doi...........43b4a3db7e03f780e07922a280f5112d