The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN based Ultraviolet Light Emitting Diode Active Regions

Authors :: J. R. Grandusky
Leo J. Schowalter
Anand V. Sampath
Wendy L. Sarney
Michael Wraback
Gregory A. Garrett
Hongen Shen
Source :: Conference on Lasers and Electro-Optics/International Quantum Electronics Conference.
Publication Year :: 2009
Publisher :: OSA, 2009.
Abstract: Time-resolved photoluminescence and transmission electron microscopy results suggest that the density of point defects may have a more significant role than threading dislocations in the performance of UVLED AlGaN active regions emitting at shorter wavelengths.

Subjects :: Photoluminescence
Materials science
business.industry
Chemical vapor deposition
Mole fraction
Crystallographic defect
law.invention
Transmission electron microscopy
law
Ultraviolet light
Optoelectronics
business
Light-emitting diode
Diode

Database :: OpenAIRE
Journal :: Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
Accession number :: edsair.doi...........43b4a3db7e03f780e07922a280f5112d

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