High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal

In this paper, we have investigated the high temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN. The monolithically integrated LED/MOSC-HEMT was implemented by using a selective epi removal approach. The temperature dependence of optical and electrical characteristics of the integrated LED is found to be comparable to that of discrete GaN based LEDs. On-resistance of the MOSC-HEMT shows gradual increase with temperature (~1.6× increase from 25 °C to 225 °C) whereas LED LOP shows rapid decrease with temperature (~6× decrease from 25 °C to 225 °C). Light output of the integrated LED is modulated by the MOSC-HEMT gate bias up to 225 °C.