Numerical Device Model for Reliable AlGaN/GaN HEMT Structure Design Based on Shear Stress

MLA

Keiichi Matsushita, et al. “Numerical Device Model for Reliable AlGaN/GaN HEMT Structure Design Based on Shear Stress.” 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Oct. 2013. EBSCOhost, https://doi.org/10.1109/csics.2013.6659242.

APA

Keiichi Matsushita, Kunio Tsuda, Kazutaka Takagi, & Mayumi Hirose. (2013). Numerical Device Model for Reliable AlGaN/GaN HEMT Structure Design Based on Shear Stress. 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS). https://doi.org/10.1109/csics.2013.6659242

Chicago

Keiichi Matsushita, Kunio Tsuda, Kazutaka Takagi, and Mayumi Hirose. 2013. “Numerical Device Model for Reliable AlGaN/GaN HEMT Structure Design Based on Shear Stress.” 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), October. doi:10.1109/csics.2013.6659242.