Transient Quantum Drift-Diffusion Modelling of Resonant Tunneling Heterostructure Nanodevices

In the present work, double‐barrier GaAs/AlGaAs resonant tunneling heterostructure nanodevices are investigated. Numerical results, obtained by in‐house developed software, based on a transient quantum drift‐diffusion model, are presented and discussed. In the model, quantum effects are incorporated via parameter dependencies on the carrier density gradients. Particular emphasis is given to the carrier densities and quasi‐Fermi levels as a function of applied bias, and electrostatic potential profiles inside the resonant tunneling diodes and superlattices.