Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain—source current correction method

A new modified Angelov current—voltage characteristic model equation is proposed to improve the drain—source current (Ids) simulation of an AlGaN/GaN-based (gallium nitride) high electron mobility transistor (AlGaN/GaN-based HEMT) at high power operation. Since an accurate radio frequency (RF) current simulation is critical for a correct power simulation of the device, in this paper we propose a method of AlGaN/GaN high electron mobility transistor (HEMT) nonlinear large-signal model extraction with a supplemental modeling of RF drain—source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency (PAE) at class-AB quiescent bias of Vgs = −3.5 V, Vds = 30 V with a frequency of 9.6 GHz are presented.