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Evaluation of atomic hydrogen effect using polycrystalline Ge thin-film transistors

Authors :
Naoto Matsuo
Akira Heya
Shota Hirano
Source :
Japanese Journal of Applied Physics. 58:068006
Publication Year :
2019
Publisher :
IOP Publishing, 2019.

Abstract

The influence of atomic hydrogen was investigated using a polycrystalline germanium (poly-Ge) thin-film transistor. High-density-atomic hydrogens were generated by catalytic reaction on a heated W mesh. The defect density in the poly-Ge film and at the poly-Ge/SiO2 interface can be reduced by three orders of magnitude with the passivation ratio of 2.3 × 10−5. From the dependence of treatment time and air exposure time for long time, the defects in poly-Ge films were preferentially terminated in comparison with that at the poly-Ge/SiO2 interface.

Details

ISSN :
13474065 and 00214922
Volume :
58
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........4608184faa764db94cb6ac003b1ef577
Full Text :
https://doi.org/10.7567/1347-4065/ab21ad