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Evaluation of atomic hydrogen effect using polycrystalline Ge thin-film transistors
- Source :
- Japanese Journal of Applied Physics. 58:068006
- Publication Year :
- 2019
- Publisher :
- IOP Publishing, 2019.
-
Abstract
- The influence of atomic hydrogen was investigated using a polycrystalline germanium (poly-Ge) thin-film transistor. High-density-atomic hydrogens were generated by catalytic reaction on a heated W mesh. The defect density in the poly-Ge film and at the poly-Ge/SiO2 interface can be reduced by three orders of magnitude with the passivation ratio of 2.3 × 10−5. From the dependence of treatment time and air exposure time for long time, the defects in poly-Ge films were preferentially terminated in comparison with that at the poly-Ge/SiO2 interface.
- Subjects :
- 010302 applied physics
Materials science
Physics and Astronomy (miscellaneous)
Passivation
Hydrogen
Orders of magnitude (temperature)
Transistor
General Engineering
Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
Germanium
01 natural sciences
law.invention
Catalysis
chemistry
law
Thin-film transistor
0103 physical sciences
Crystallite
Subjects
Details
- ISSN :
- 13474065 and 00214922
- Volume :
- 58
- Database :
- OpenAIRE
- Journal :
- Japanese Journal of Applied Physics
- Accession number :
- edsair.doi...........4608184faa764db94cb6ac003b1ef577
- Full Text :
- https://doi.org/10.7567/1347-4065/ab21ad