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Deep ultraviolet enhanced wet chemical oxidation and etching of gallium nitride
- Source :
- Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178).
- Publication Year :
- 1998
- Publisher :
- IEEE, 1998.
-
Abstract
- We present a use of deep UV irradiation to enhance the oxidative-dissolution process in the photoelectrochemical etching of gallium nitride (GaN). Our study indicates that the hydration effect plays an important role in establishing a peak etch rate as high as 90 nm/min. and 120 nm/min. in aqueous potassium hydroxide (KOH) and phosphorus acid (H/sub 3/PO/sub 4/) solutions at pH=14.25 and 0.75, respectively.
Details
- Database :
- OpenAIRE
- Journal :
- Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178)
- Accession number :
- edsair.doi...........4643eeca935355eb3f16518e14b36feb
- Full Text :
- https://doi.org/10.1109/cleo.1998.675987