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Interface optimization of 4H-SiC (0001) MOS structures with supercritical CO2 fluid
- Source :
- Applied Physics Express. 13:111002
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- Supercritical CO2 fluid is reported as an effective media in optimizing the SiO2/SiC interface in 4H-SiC(0001) MOS structures at a temperature as low as 150 °C. After SCCO2 treatment, the breakdown electric field is improved to 10.7 MV cm−1. The near-interfacial oxide traps is decreased from 1.62 × 1011 to 1.84 × 1010 cm−2. The interface state density at 0.2 eV below E C is reduced from 6 × 1012 to 2.5 × 1012 eV−1 cm−2. A dynamic reaction model is proposed to explain the defect passivation reaction. This technique can be effectively applied to interface semiconductor devices to enhance performance.
- Subjects :
- 010302 applied physics
Materials science
Passivation
business.industry
Interface (computing)
General Engineering
Oxide
General Physics and Astronomy
02 engineering and technology
Semiconductor device
021001 nanoscience & nanotechnology
01 natural sciences
Supercritical fluid
chemistry.chemical_compound
chemistry
Electric field
Reaction model
State density
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 18820786 and 18820778
- Volume :
- 13
- Database :
- OpenAIRE
- Journal :
- Applied Physics Express
- Accession number :
- edsair.doi...........46c85f902a6e789dbcde5519746f96db