Interface optimization of 4H-SiC (0001) MOS structures with supercritical CO2 fluid

Supercritical CO2 fluid is reported as an effective media in optimizing the SiO2/SiC interface in 4H-SiC(0001) MOS structures at a temperature as low as 150 °C. After SCCO2 treatment, the breakdown electric field is improved to 10.7 MV cm−1. The near-interfacial oxide traps is decreased from 1.62 × 1011 to 1.84 × 1010 cm−2. The interface state density at 0.2 eV below E C is reduced from 6 × 1012 to 2.5 × 1012 eV−1 cm−2. A dynamic reaction model is proposed to explain the defect passivation reaction. This technique can be effectively applied to interface semiconductor devices to enhance performance.