First demonstration of 15nm-WFIN inversion-mode relaxed-Germanium n-FinFETs with Si-cap free RMG and NiSiGe Source/Drain

This work demonstrates the feasibility of an inversion-mode relaxed Ge n-FinFET scaled down to 15-nm fin width and sub-40-nm gate length. CMOS-compatible processing steps such as STI formation, replacement metal gate (RMG), in-situ Phosphorus-doped raised-Source/Drain and a Ni-based contact scheme have been successfully implemented. This first industry-compatible Ge n-FinFET has a G M,SAT,EXT / SS SAT of 250 µS.µm−1 / 130 mV.dec−1 (at the targeted V DS =0.5V) which is on par with accumulation-mode junction-less Ge n-FETs.