Noise in 6H-SiC ion implanted p–n diodes: Effect of the active area on the noise properties of these junctions

Authors :: G. Holmén
H. Ouacha
A. Ouacha
Magnus Willander
Qamar Ul Wahab
Source :: Journal of Applied Physics. 85:6557-6562
Publication Year :: 1999
Publisher :: AIP Publishing, 1999.
Abstract: Low frequency noise in 6H-SiC ion implanted p–n diodes has been investigated. The noise measurements were performed under forward bias over a wide temperature range from 77 to 300 K and frequency range from 10 to 100 kHz. Three diodes with different areas A1, A2, and A3, (A1

Subjects :: Materials science
business.industry
Noise spectral density
Infrasound
General Physics and Astronomy
Optoelectronics
Flicker noise
Atmospheric temperature range
business
Current density
Noise (radio)
Diode
Ion

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