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A Highly Efficient Annealing Process With Supercritical N2O at 120 °C for SiO2/4H–SiC Interface
- Source :
- IEEE Transactions on Electron Devices. 68:1841-1846
- Publication Year :
- 2021
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2021.
-
Abstract
- A novel post-oxidation annealing (POA) process with supercritical N2O (SCN2O) fluid is reported to be highly effective in improving the interface properties of the SiO2/4H–silicon carbide (SiC) (0001) systems. After SCN2O POA, the interface state density reduces to $2.8 \times 10^{{11}}$ eV−1cm−2, which is about 3.5 times lower than that after a traditional high-temperature N2O POA process. Meanwhile, the highest oxide critical electric field shows an increase of 18.19% and the near-interfacial oxide traps is reduced by 69.90% compared with that after N2O POA process. The process temperature is as low as 120 °C. The significantly reduced processing temperature avoids additional defect generation while the supercritical state provides a stronger nitridation effect. SCN2O annealing is a promising candidate for POA process toward high-performance SiC power metal-oxide-semiconductor field effect transistors (MOSFETs).
- Subjects :
- 010302 applied physics
Materials science
Annealing (metallurgy)
Oxide
01 natural sciences
Supercritical fluid
Electronic, Optical and Magnetic Materials
Carbide
Hysteresis
chemistry.chemical_compound
chemistry
Chemical engineering
Electric field
0103 physical sciences
Silicon carbide
Field-effect transistor
Electrical and Electronic Engineering
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 68
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........473dfa03992f589686c288a60ad50484