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Measured dependence of lifetime upon local defect density and temperature in depletion layers of epitaxial silicon diodes
- Source :
- IEEE Transactions on Electron Devices. 14:634-634
- Publication Year :
- 1967
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1967.
Details
- ISSN :
- 00189383
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........47df911ae90908c85b4fdd1870dbb58c
- Full Text :
- https://doi.org/10.1109/t-ed.1967.16074