Codoping effect of O2 into Er-doped InP epitaxial layers grown by OMVPE

The temperature dependence of ESR in InP : Er and the O2 codoping effect in InP : Er have been studied by X-band ESR measurement at low temperature. The ESR at around g=6, which corresponds to Er3+ site with Td symmetry, lost it's intensity quickly as the temperature is increased and disappeared above 12 K . The temperature dependence of the integrated intensity turned out to be different from simple Curie law. The intensity of the ESR at around g=6 decreased as O2 is codoped into InP : Er . No new ESR was observed in O2 codoped InP : Er in contrast to the results of O2 codoped GaAs : Er . These results are discussed in connection with the O2 codoping effect of photoluminescence spectra.