Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate

Authors :: Dirk Fahle
Alessandro Ottaviani
Lars Heuken
Muhammad Alshahed
Joachim N. Burghartz
Michael Heuken
Mohammed Alomari
Source :: Japanese Journal of Applied Physics. 58:SCCD11
Publication Year :: 2019
Publisher :: IOP Publishing, 2019.

Subjects :: Materials science
Physics and Astronomy (miscellaneous)
Silicon
business.industry
General Engineering
General Physics and Astronomy
chemistry.chemical_element
Algan gan
Substrate (electronics)
High-electron-mobility transistor
Thermal conduction
chemistry
Optoelectronics
business

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