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Novel Materials and Processes in Replacement Metal Gate for Advanced CMOS Technology

Authors :
Michael S Chan
Marinus Hopstaken
Kisup Chung
Zhebo Chen
Miaomiao Wang
Steven Hung
Ruqiang Bao
Barman Soumendra Narayan
Yang Yixiong
Xin Miao
Sanjay Natarajan
Richard A. Conti
Hemanth Jagannathan
Lin Yongjing
Tang Wei
Li Luping
Bala S. Haran
Siddarth A. Krishnan
Michael Chudzik
Dalea McHerron
Source :
2018 IEEE International Electron Devices Meeting (IEDM).
Publication Year :
2018
Publisher :
IEEE, 2018.

Abstract

This paper addresses novel approaches at material and integration fronts for gate applications. Material wise, new n work function metal (WFM) material is explored to address the need for reducing gate resistance and maintaining proper Vt at 20A or less WFM thickness. Integration wise, next generation dipole is tested with various process sequences to address the need in lowering overall thermal budget at the gate level for advanced architectures, such as scaled FinFET and Nanosheets.

Details

Database :
OpenAIRE
Journal :
2018 IEEE International Electron Devices Meeting (IEDM)
Accession number :
edsair.doi...........4977144b733227eec099124ed6d44a7e