Low threading dislocation density Ge deposited on Si (100) using RPCVD

Threading dislocation density as function of Ge thickness deposited with different annealing processes. AFM images of 4.7 μm thick Ge deposited without annealing process and Ge deposited with cyclic annealing process.► Smooth Ge layer growth on Si (100) surface without graded SiGe buffer is performed using RPCVD. ► Threading dislocation density (TDD) is decreased with increasing Ge thickness. ► TDD is decreased by postannealing and further decease is observed by cyclic annealing. ► TDD of 7×10 5 cm −2 without degrading surface roughness is achieved.