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Partial discharges in Aluminium nitrite ceramic substrates

Authors :
J. L. Auge
M.T. Do
Olivier Lesaint
T. A. T. Vu
Source :
2010 10th IEEE International Conference on Solid Dielectrics.
Publication Year :
2010
Publisher :
IEEE, 2010.

Abstract

Aluminium nitrite (AlN) or alumina (Al 2 O 3 ) substrates are widely used in power electronics modules, due to their ability to provide both electrical insulation, and heat conduction properties. A gel layer usually covers the substrate, semiconductor chips, and bondings to prevent partial discharges (PD) from occurring within the module. However, at high voltage PDs can be observed in high electric field regions, mainly at the sharp edges of copper tracks on the substrate. In this study, we try to determine the origin of these PDs. Phase resolved PD recordings (PRPD) and optical visualisation at very high sensitivity are carried out on substrates embedded in gel or insulating liquids. PD features are very different from those obtained in needle-plane geometry in gel or liquid. The main conclusion is that PDs of low amplitudes probably originate from the ceramic itself, due to the presence of numerous µm-sized pores in sintered materials.

Details

Database :
OpenAIRE
Journal :
2010 10th IEEE International Conference on Solid Dielectrics
Accession number :
edsair.doi...........49fdc3dc770a87581aa1bb3c132b53eb
Full Text :
https://doi.org/10.1109/icsd.2010.5568137