Highly resistive body STI NDeMOS: An optimized DeMOS device to achieve moving current filaments for robust ESD protection

Authors :: Maryam Shojaei Baghini
Jens Schneider
Mayank Shrivastava
V. Ramgopal Rao
Harald Gossner
Source :: 2009 IEEE International Reliability Physics Symposium.
Publication Year :: 2009
Publisher :: IEEE, 2009.
Abstract: A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed.

Subjects :: Engineering
Resistive touchscreen
Electrostatic discharge
business.industry
Electrical engineering
Hardware_PERFORMANCEANDRELIABILITY
Gate oxide
Logic gate
MOSFET
Hardware_INTEGRATEDCIRCUITS
Breakdown voltage
business
Current density
NMOS logic
Hardware_LOGICDESIGN

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