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Effect of g-C3N4 on structural, optical, and photocatalytic properties of hexagonal cylinder-like twinned ZnO microcrystals prepared by the hydrothermal method
- Source :
- Journal of Materials Science: Materials in Electronics. 32:24095-24106
- Publication Year :
- 2021
- Publisher :
- Springer Science and Business Media LLC, 2021.
-
Abstract
- The effect of g-C3N4 on the structural, optical, and photocatalytic properties of ZnO microcrystals under hydrothermal conditions was investigated in this research. The addition of g-C3N4 changed not only the phase composition, but also affect the growth of ZnO crystals, changing the lattice parameter and the transformation of hexagonal cylinder-like twinned ZnO microcrystals (1–2 μm length and 0.5–1 μm diameter) to g-C3N4 amalgamated rice-like ZnO nanostructure (500 nm length and 100 diameter) with type II heterojunction. The optical bandgap was found to be 3.27 and 3.21 eV for pristine ZnO and g-C3N4@ZnO, respectively. Owing to the narrow bandgap (2.7 eV) of g-C3N4, a red shift towards the visible region in optical absorption and a substantial reduction in the optical bandgap was observed for g-C3N4@ZnO heterostructure. Besides, it is also found that g-C3N4@ZnO has significantly higher photocatalytic effect (93 %) on RhB dye degradation than pristine ZnO (70 %) and g-C3N4 (68 %), because it produce a large number of reactive species (·OH and O2•− radicals) by hold-up the recombination of charge carriers via type II heterojunction. This research may be one of the most realistic approaches to developing effective photocatalysts for environmental remediation.
- Subjects :
- Nanostructure
Materials science
Band gap
Heterojunction
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Hydrothermal circulation
Electronic, Optical and Magnetic Materials
Lattice constant
Chemical engineering
Photocatalysis
Charge carrier
Electrical and Electronic Engineering
Absorption (electromagnetic radiation)
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi...........4b046780e838f51c376f5b5799910aa1
- Full Text :
- https://doi.org/10.1007/s10854-021-06872-9