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Efficiency of the a-Si:H solar cell and grain size of SnO2transparent conductive film

Authors :
Yoshikazu Hayashi
T. Mishuku
N. Shiba
H. Karasawa
M. Yamanaka
A. Ito
H. Iida
Source :
IEEE Electron Device Letters. 4:157-159
Publication Year :
1983
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 1983.

Abstract

The relationship between average grain size on the surface of SnO 2 transparent conductive film and conversion efficiency of the a-Si:H solar cell was investigated. a-Si:H solar cells were fabricated on SnO 2 /glass substrates with various grain sizes. The cell structure was glass/p(SiC)-i-n/Al and the effective cell area was 4 × 10-2cm2. The reflectivity from the glass substrate was reduced to about 7 percent with increasing the grain size from 0.1 to 0.8µm, and the short-circuit current was inceased from 12 to 14mA/cm2. A 7.9 percent of conversion efficiency was achieved using milky SnO 2 film of 0.4-µm average grain size at AM-100mW/cm2.

Details

ISSN :
07413106
Volume :
4
Database :
OpenAIRE
Journal :
IEEE Electron Device Letters
Accession number :
edsair.doi...........4b60032b4c9951516695320cb81a0549
Full Text :
https://doi.org/10.1109/edl.1983.25686