Efficient Oxygen‐Vacancy Suppression and Electrical Stabilization of Solution‐Processed In 2 O 3 :Q (Q = S, Se) Thin‐Film Transistor with Chalcogen Alloying

Subjects

Subjects :

Electronic, Optical and Magnetic Materials

Details

ISSN :

2199160X

Volume :

8

Database :

OpenAIRE

Journal :

Advanced Electronic Materials

Accession number :

edsair.doi...........4c4c778bfccb45583b150bff97e9cc6f

Full Text :

https://doi.org/10.1002/aelm.202101250