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Epitaxial Growth of Centimeter-Scale Single-Crystal MoS2 Monolayer on Au(111)
- Source :
- ACS Nano. 14:5036-5045
- Publication Year :
- 2020
- Publisher :
- American Chemical Society (ACS), 2020.
-
Abstract
- Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have emerged as attractive platforms in next-generation nanoelectronics and optoelectronics for reducing device sizes down to a 10 nm scale. To achieve this, the controlled synthesis of wafer-scale single-crystal TMDs with high crystallinity has been a continuous pursuit. However, previous efforts to epitaxially grow TMD films on insulating substrates (e.g., mica and sapphire) failed to eliminate the evolution of antiparallel domains and twin boundaries, leading to the formation of polycrystalline films. Herein, we report the epitaxial growth of wafer-scale single-crystal MoS2 monolayers on vicinal Au(111) thin films, as obtained by melting and resolidifying commercial Au foils. The unidirectional alignment and seamless stitching of the MoS2 domains were comprehensively demonstrated using atomic- to centimeter-scale characterization techniques. By utilizing onsite scanning tunneling microscope characterizations combined with first-principles calculations, it was revealed that the nucleation of MoS2 monolayer is dominantly guided by the steps on Au(111), which leads to highly oriented growth of MoS2 along the ⟨110⟩ step edges. This work, thereby, makes a significant step toward the practical applications of MoS2 monolayers and the large-scale integration of 2D electronics.
- Subjects :
- Materials science
business.industry
General Engineering
Nucleation
General Physics and Astronomy
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
0104 chemical sciences
law.invention
law
Monolayer
Sapphire
Optoelectronics
General Materials Science
Thin film
Scanning tunneling microscope
0210 nano-technology
business
Single crystal
Vicinal
Subjects
Details
- ISSN :
- 1936086X and 19360851
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- ACS Nano
- Accession number :
- edsair.doi...........4c666711b81093d7be1af2cfd3f832c1