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Correlation between electrical and microscopic properties of TiSi interfaces

Authors :
J.P. Nys
H. S. Zeng
G. Dalmai
X Wallart
Source :
Vacuum. 41:1043-1045
Publication Year :
1990
Publisher :
Elsevier BV, 1990.

Abstract

We present a detailed investigation of the interface formation in the TiSi system at low temperatures (25–300°C). Accurate Auger and Electron Energy Loss measurements and analysis are used to study the microscopic properties of the interfaces. The correlation between these properties and in situ resistivity measurements is discussed.

Subjects

Subjects :
In situ
Materials science
Electron energy
Condensed matter physics
Electrical resistivity and conductivity
Interface (computing)
Analytical chemistry
Condensed Matter Physics
Instrumentation
Surfaces, Coatings and Films
Auger

Details

ISSN :
0042207X
Volume :
41
Database :
OpenAIRE
Journal :
Vacuum
Accession number :
edsair.doi...........4cc3a3eb96651beb155a10cdc0a8ee3d
Full Text :
https://doi.org/10.1016/0042-207x(90)93855-d
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