Structural tailoring of multilayer porous silicon for photonic crystal application

The 1D photonic crystals based on multilayer porous silicon are reported in this paper. The photonic structures are composed of alternating high and low dielectric function porous silicon layers by changing the porosity of porous silicon with a periodic electric pulse alternating between 10.0 and 70.0 mA/cm2 during anodization on p+-type (1 0 0) silicon wafer with resistance range 0.01–0.02 Ω cm. Omni-directional mirrors as well as narrow band filters working in the range around 1.55 μm are designed and fabricated. Photonic crystal with such a structure exhibits high quality of filter behavior.