Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Authors :: Taehoon Jang
Taemyung Kwak
Yongjun Nam
Myoung-Jin Kang
Seokgyu Choi
Ho-Young Cha
Kyeongjae Lee
Min Han
Donghyeop Jung
Hyun-Seop Kim
Kwang-Seok Seo
Sang-Min Lee
Okhyun Nam
Byeongchan So
Uiho Choi
Source :: physica status solidi (a). 217:1900695
Publication Year :: 2019
Publisher :: Wiley, 2019.

Subjects :: Materials science
business.industry
Aluminium nitride
Direct current
Surfaces and Interfaces
High-electron-mobility transistor
Double heterostructure
Condensed Matter Physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
Materials Chemistry
Sapphire
Optoelectronics
Radio frequency
Electrical and Electronic Engineering
business

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