Interfacial Segregation of Metal at NiSi/Si Junction for Novel Dual Silicide Technology

Authors :: Atsuhiro Kinoshita
Yoshifumi Nishi
Yoshinori Tsuchiya
Junji Koga
Takashi Yamauchi
Source :: 2007 IEEE International Electron Devices Meeting.
Publication Year :: 2007
Publisher :: IEEE, 2007.
Abstract: It is demonstrated that Schottky barrier height (PhiB) for NiSi/Si junction can be modulated by interfacial segregation of metals. Thin films of rare earth (RE) metals and platinum (Pt) are deposited on NiSi/Si Schottky diodes and annealed. The metals diffuse into NiSi and segregate at NiSi/Si interface, which leads to PhiB modulation by 0.1 eV. Similar technique can be applied to PtSi/Si junction as well for advanced dual silicide process.

Subjects :: Materials science
Silicon
business.industry
Annealing (metallurgy)
Schottky barrier
Metallurgy
chemistry.chemical_element
Schottky diode
Metal
chemistry.chemical_compound
chemistry
visual_art
Silicide
visual_art.visual_art_medium
Optoelectronics
Thin film
business
Platinum

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